hur3020ct , HUR3030CT hur3020ct HUR3030CT v rsm v 200 300 v rrm v 200 300 symbol t est conditions maxim um ratings unit i frms i f a vm t c =135 o c; rectangular , d=0.5 35 2 x 15 a t vj t vjm t stg -55...+175 175 -55...+150 o c i fsm t vj =45 o c; t p =10ms (50hz), sine e as t vj =25 o c; non-repetitiv e; i as =2.5a; l=180uh v a =1.5 . v r typ .; f=10khz; repetitiv e 140 0.8 0.3 a mj i ar a p tot t c =25 o c m d mounting torque typical 95 0.4...0.6 2 w nm w eight g high-p erf ormance wide t emperature rang e ultra f ast reco ver y epitaxial diode dim. a b c d e f g h j k m n q r milimeter min. max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 bsc 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 inches min. max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 bsc 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 dimensions t o-220ab a=anode , c=cathode , t ab=cathode a a c c(tab) a c a
hur3020ct , HUR3030CT ad v ant a ges * a v alanche v oltage r ated f or reliab le oper ation * soft re v erse reco v er y f or lo w emi/rfi * lo w i rm reduces: - p o w er dissipation within the diode - t ur n-on loss in the comm utating s witch applica tions * antipar allel diode f or high frequency s witching de vices * antisatur ation diode * sn ub ber diode * f ree wheeling diode in con v er ters and motor control circuits * rectifiers in s witch mode po w er supplies (smps) * inductiv e heating * uninterr uptib le po w er supplies (ups) * ultr asonic cleaners and w elders fea tures * inter national standard pac kage * planar passiv ated chips * v er y shor t reco v er y time * extremely lo w s witching losses * lo w i rm -v alues * soft reco v er y beha viour symbol t est conditions characteristic v alues typ. max. unit t vj =25 o c; v r =v rrm t vj =150 o c; v r =v rrm 100 0.5 ua ma i r r thjc r thch 1.6 k/w t rr i f =1a; -di/dt=100a/us; v r =30v ; t vj =25 o c ns i rm v r =100v ; i f =25a; -di f /dt=100a/us; t vj =100 o c 2.7 a i f =15a; t vj =150 o c t vj =25 o c 1.21 1.68 v v f 0.5 30 high-p erf ormance wide t emperature rang e ultra f ast reco ver y epitaxial diode
hur3020ct , HUR3030CT high-p erf ormance wide t emperature rang e ultra f ast reco ver y epitaxial diode 2 0 0 6 00 1000 04 0 0 8 0 0 30 40 50 60 70 80 0. 00 001 0. 00 01 0 . 001 0. 01 0. 1 1 0 . 001 0. 01 0. 1 1 10 0 4 0 8 0 120 160 0. 6 0. 8 1. 0 1. 2 1. 4 k f t vj c -d i f /d t t s k/ w 0 2 00 40 0 6 00 80 0 1000 4 6 8 10 12 14 0. 6 0 0. 6 5 0. 7 0 0. 7 5 0. 8 0 0. 8 5 v fr di f /d t v 2 0 0 6 00 1000 04 0 0 8 0 0 0 5 10 15 20 100 1 000 0 10 0 20 0 30 0 40 0 50 0 01 2 0 10 20 30 40 i rm q r i f a v f -di f /d t -di f /d t a/ us a v nc a/ us a/ us t rr ns t fr a/ us us z th jc t vj = 1 5 0 c t vj = 1 0 0 c t vj = 25 c i f = 3 0 a i f = 1 5 a i f = 7 . 5a t vj = 100 c v r = 15 0v t vj = 100 c v r = 15 0v t vj = 1 0 0 c v r = 15 0v t vj = 100 c i f = 15a v fr t fr i rm q r i f = 3 0 a i f = 1 5 a i f = 7 . 5a i f = 30a i f = 15a i f = 7. 5a fig. 3 peak reverse current i rm versus -di f /dt fig. 2 reverse recovery charge q r versus -di f /dt fig. 1 forward current i f versus v f fig. 4 dynamic parameters q r , i rm versus t vj fig. 5 recovery time t rr versus -di f /dt fig. 6 peak forward voltage v fr and t fr versus di f /dt fig. 7 transient thermal resistance junction to case constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.908 0.005 2 0.35 0.0003 3 0.342 0.017
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